SSF1221J2
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF1221J2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 48
nS
Cossⓘ -
Output Capacitance: 685
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package: DFN2X2-6L
SSF1221J2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF1221J2
Datasheet (PDF)
..1. Size:388K silikron
ssf1221j2.pdf
SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
9.1. Size:536K silikron
ssf12n60f.pdf
SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55 (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.2. Size:433K silikron
ssf12n65f.pdf
SSF12N65FMain Product Characteristics: VDSS 650V RDS(on) 0.68(typ.) ID 12AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
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