SSF12N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF12N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37.8 nS
Cossⓘ - Capacitancia de salida: 184 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de SSF12N60F MOSFET
SSF12N60F Datasheet (PDF)
ssf12n60f.pdf

SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55 (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf12n65f.pdf

SSF12N65FMain Product Characteristics: VDSS 650V RDS(on) 0.68(typ.) ID 12AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1221j2.pdf

SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
Otros transistores... SSF11NS60UF , SSF11NS65 , SSF11NS65F , SSF11NS65U , SSF11NS65UD , SSF11NS70UF , SSF11NS70UG , SSF1221J2 , MMD60R360PRH , SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , SSF1502D , SSF1502G5 , SSF1504D , SSF1526 .



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