SSF12N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF12N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 55 nC

Tiempo de elevación (tr): 37.8 nS

Conductancia de drenaje-sustrato (Cd): 184 pF

Resistencia drenaje-fuente RDS(on): 0.7 Ohm

Empaquetado / Estuche: TO220F

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SSF12N60F Datasheet (PDF)

1.1. ssf12n60f.pdf Size:536K _silikron

SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

3.1. ssf12n65f.pdf Size:433K _silikron

SSF12N65F Main Product Characteristics: VDSS 650V RDS(on) 0.68Ω(typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

5.1. ssf1221j2.pdf Size:388K _silikron

SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 mΩ(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits:  Advanced trench MOSFET process technology  Special designed for battery charge, load switching in cellular handset and general ultraportable applications  Ultra low on-resistance with low gate charge  Fast switc

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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