SSF12N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF12N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 50 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 55 nC
Tiempo de elevación (tr): 37.8 nS
Conductancia de drenaje-sustrato (Cd): 184 pF
Resistencia drenaje-fuente RDS(on): 0.7 Ohm
Empaquetado / Estuche: TO220F
Búsqueda de reemplazo de MOSFET SSF12N60F
SSF12N60F Datasheet (PDF)
1.1. ssf12n60f.pdf 
Size:536K _silikron
SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
3.1. ssf12n65f.pdf Size:433K _silikron
SSF12N65F Main Product Characteristics: VDSS 650V RDS(on) 0.68Ω(typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
5.1. ssf1221j2.pdf Size:388K _silikron
SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 mΩ(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
