SSF12N60F Datasheet and Replacement
Type Designator: SSF12N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37.8 nS
Cossⓘ - Output Capacitance: 184 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220F
SSF12N60F substitution
SSF12N60F Datasheet (PDF)
ssf12n60f.pdf

SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55 (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf12n65f.pdf

SSF12N65FMain Product Characteristics: VDSS 650V RDS(on) 0.68(typ.) ID 12AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1221j2.pdf

SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
Datasheet: SSF11NS60UF , SSF11NS65 , SSF11NS65F , SSF11NS65U , SSF11NS65UD , SSF11NS70UF , SSF11NS70UG , SSF1221J2 , MMD60R360PRH , SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , SSF1502D , SSF1502G5 , SSF1504D , SSF1526 .
Keywords - SSF12N60F MOSFET datasheet
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