SSF1530 Todos los transistores

 

SSF1530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF1530
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 241 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60.8 nS
   Cossⓘ - Capacitancia de salida: 257 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO220
 

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SSF1530 Datasheet (PDF)

 ..1. Size:650K  silikron
 ssf1530.pdf pdf_icon

SSF1530

SSF1530 Main Product Characteristics: VDSS 150V RDS(on) 28mohm(typ.) ID 60A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1530

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1530

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.3. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1530

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

MOSTRAR MÁS

Otros transistores... SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , SSF1502D , SSF1502G5 , SSF1504D , SSF1526 , IRF3205 , SSF18N50F , SSF18NS60 , SSF18NS60F , SSF1N80D , SSF1N80G5 , SSF1N90D , SSF20N50UH , SSF20N60H .

History: IXKC19N60C5 | QM2504W

 

 
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