Справочник MOSFET. SSF1530

 

SSF1530 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF1530
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 241 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 60.8 ns
   Cossⓘ - Выходная емкость: 257 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SSF1530

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF1530 Datasheet (PDF)

 ..1. Size:650K  silikron
 ssf1530.pdf pdf_icon

SSF1530

SSF1530 Main Product Characteristics: VDSS 150V RDS(on) 28mohm(typ.) ID 60A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1530

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1530

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.3. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1530

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

ПОКАЗАТЬ ЕЩЁ

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History: CHM634PAGP | ZXMN6A07F | NVMFS5A140PLZ

 

 
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