SSF1N80G5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1N80G5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40 W
Tensión drenaje-fuente (Vds): 800 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 15 pF
Resistencia drenaje-fuente RDS(on): 16 Ohm
Empaquetado / Estuche: SOT223
Búsqueda de reemplazo de MOSFET SSF1N80G5
SSF1N80G5 Datasheet (PDF)
1.1. ssf1n80g5.pdf 
Size:360K _silikron
SSF1N80G5 Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
3.1. ssf1n80d.pdf Size:400K _silikron
SSF1N80D Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
5.1. ssf1n90d.pdf Size:401K _silikron
SSF1N90D Main Product Characteristics: VDSS 900V RDS(on) 15Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
