SSF1N80G5 Todos los transistores

 

SSF1N80G5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1N80G5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 29 nS

Conductancia de drenaje-sustrato (Cd): 15 pF

Resistencia drenaje-fuente RDS(on): 16 Ohm

Empaquetado / Estuche: SOT223

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SSF1N80G5 Datasheet (PDF)

1.1. ssf1n80g5.pdf Size:360K _silikron

SSF1N80G5
SSF1N80G5

 SSF1N80G5  Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

3.1. ssf1n80d.pdf Size:400K _silikron

SSF1N80G5
SSF1N80G5

 SSF1N80D  Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

 5.1. ssf1n90d.pdf Size:401K _silikron

SSF1N80G5
SSF1N80G5

 SSF1N90D  Main Product Characteristics: VDSS 900V RDS(on) 15Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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