SSF1N80G5 Specs and Replacement
Type Designator: SSF1N80G5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: SOT223
SSF1N80G5 substitution
- MOSFET ⓘ Cross-Reference Search
SSF1N80G5 datasheet
Detailed specifications: SSF1502G5, SSF1504D, SSF1526, SSF1530, SSF18N50F, SSF18NS60, SSF18NS60F, SSF1N80D, IRF540, SSF1N90D, SSF20N50UH, SSF20N60H, SSF20NS60, SSF20NS60F, SSF20NS65, SSF20NS65F, SSF2112H2
Keywords - SSF1N80G5 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFHM8228
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