SSF1N80G5 Datasheet and Replacement
Type Designator: SSF1N80G5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: SOT223
SSF1N80G5 substitution
SSF1N80G5 Datasheet (PDF)
ssf1n80g5.pdf

SSF1N80G5Main Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1AMarking and pin SOT223Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n80d.pdf

SSF1N80DMain Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n90d.pdf

SSF1N90DMain Product Characteristics: VDSS 900V RDS(on) 15 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Datasheet: SSF1502G5 , SSF1504D , SSF1526 , SSF1530 , SSF18N50F , SSF18NS60 , SSF18NS60F , SSF1N80D , IRF540N , SSF1N90D , SSF20N50UH , SSF20N60H , SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 .
History: OSG65R1K5DZF | IPP100N04S2L-03 | FDC3612-HF | SSF20NS65 | HCD80R1K4 | RZR040P01 | HM9436
Keywords - SSF1N80G5 MOSFET datasheet
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History: OSG65R1K5DZF | IPP100N04S2L-03 | FDC3612-HF | SSF20NS65 | HCD80R1K4 | RZR040P01 | HM9436



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