SSF20N60H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF20N60H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 208 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 856 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET SSF20N60H
SSF20N60H Datasheet (PDF)
ssf20n60h.pdf
SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technologyw
ssf20n60s ssp20n60s ssb20n60s.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is
ssf20ns65.pdf
SSF20NS65Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65 series MOSFETs is a new technology. whic
ssf20n50uh.pdf
SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri
ssf20ns60f.pdf
SSF20NS60F Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60F series MOSFETs is a new
ssf20ns65f.pdf
SSF20NS65FMain Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65F series MOSFETs is a new technology. w
ssf20ns60.pdf
SSF20NS60 Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60 series MOSFETs is a new te
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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