SSF20N60H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF20N60H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 856 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
SSF20N60H Datasheet (PDF)
ssf20n60h.pdf

SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technologyw
ssf20n60s ssp20n60s ssb20n60s.pdf

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is
ssf20ns65.pdf

SSF20NS65Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65 series MOSFETs is a new technology. whic
ssf20n50uh.pdf

SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMO20N15T2 | 4N65G-E-K08-5060-R | 2SK417 | NCEP015N60LL | SIHFZ44L | TPC65R260M | BRCS100N06BD
History: WMO20N15T2 | 4N65G-E-K08-5060-R | 2SK417 | NCEP015N60LL | SIHFZ44L | TPC65R260M | BRCS100N06BD



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