Справочник MOSFET. SSF20N60H

 

SSF20N60H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF20N60H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 856 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SSF20N60H

 

 

SSF20N60H Datasheet (PDF)

 ..1. Size:463K  silikron
ssf20n60h.pdf

SSF20N60H
SSF20N60H

SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technologyw

 6.1. Size:1827K  cn super semi
ssf20n60s ssp20n60s ssb20n60s.pdf

SSF20N60H
SSF20N60H

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is

 8.1. Size:376K  silikron
ssf20ns65.pdf

SSF20N60H
SSF20N60H

SSF20NS65Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65 series MOSFETs is a new technology. whic

 8.2. Size:463K  silikron
ssf20n50uh.pdf

SSF20N60H
SSF20N60H

SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri

 8.3. Size:477K  silikron
ssf20ns60f.pdf

SSF20N60H
SSF20N60H

SSF20NS60F Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60F series MOSFETs is a new

 8.4. Size:380K  silikron
ssf20ns65f.pdf

SSF20N60H
SSF20N60H

SSF20NS65FMain Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65F series MOSFETs is a new technology. w

 8.5. Size:480K  silikron
ssf20ns60.pdf

SSF20N60H
SSF20N60H

SSF20NS60 Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60 series MOSFETs is a new te

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