SSF2122E Todos los transistores

 

SSF2122E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2122E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18.2 nS

Conductancia de drenaje-sustrato (Cd): 124 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: DFN3X3-8L

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SSF2122E Datasheet (PDF)

1.1. ssf2122e.pdf Size:542K _silikron

SSF2122E
SSF2122E

 SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

4.1. ssf2129h3.pdf Size:545K _silikron

SSF2122E
SSF2122E

 SSF2129H3 Main Product Characteristics: VDSS -20V D1 D2 G1 G2 RDS(on) 21mΩ (typ.) S1 S2 ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and re

 5.1. ssf2160g4.pdf Size:621K _silikron

SSF2122E
SSF2122E

 SSF2160G4  Main Product Characteristics: VDSS 20V 2160G4 2160G4 S25 RDS(on) 28mohm(typ.) ID 4.5A Marking and pin SOT23-3 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

5.2. ssf2112h2.pdf Size:634K _silikron

SSF2122E
SSF2122E

 SSF2112H2  Main Product Characteristics: D1 D2 VDSS 20V D1 D2 S1 S2 G1 G2 2112H2 8205A S1 S2 G1 G2 RDS(on) 10mohm(typ.) S1 S2 ID 8A Marking and pin Schematic diagram  TSSOP-8  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

 5.3. ssf2145ch6.pdf Size:280K _silikron

SSF2122E
SSF2122E

 SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits:  Advanced trench MOSFET process technology  Special designed for load switching and buttery protection applications  150℃ operating temperature Description: It utilizes the l

5.4. ssf2116ej3.pdf Size:347K _silikron

SSF2122E
SSF2122E

 SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohm(typ.) ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

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