SSF2122E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF2122E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18.2 ns
Cossⓘ - Выходная емкость: 124 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: DFN3X3-8L
Аналог (замена) для SSF2122E
SSF2122E Datasheet (PDF)
ssf2122e.pdf

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf2129h3.pdf

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re
ssf2116ej3.pdf

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf2145ch6.pdf

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l
Другие MOSFET... SSF20N50UH , SSF20N60H , SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , SSF2116EJ3 , IRF3710 , SSF2129H3 , SSF2145CH6 , SSF2160G4 , SSF2300 , SSF2300A , SSF2300B , SSF2301 , SSF2301A .
History: 2SK2513 | AP85T03GP | HUFA76437P3 | HGT022N12S | DMP6110SSD | CEM3258
History: 2SK2513 | AP85T03GP | HUFA76437P3 | HGT022N12S | DMP6110SSD | CEM3258



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