SSF2160G4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF2160G4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.3 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOT233
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SSF2160G4 Datasheet (PDF)
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Otros transistores... SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , SSF2116EJ3 , SSF2122E , SSF2129H3 , SSF2145CH6 , IRFB4227 , SSF2300 , SSF2300A , SSF2300B , SSF2301 , SSF2301A , SSF2301B , SSF2302 , SSF2305 .



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