Справочник MOSFET. SSF2160G4

 

SSF2160G4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF2160G4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.3 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOT233
 

 Аналог (замена) для SSF2160G4

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF2160G4 Datasheet (PDF)

 ..1. Size:621K  silikron
ssf2160g4.pdfpdf_icon

SSF2160G4

SSF2160G4Main Product Characteristics: VDSS 20V 2160G42160G4S25 RDS(on) 28mohm(typ.)ID 4.5A Marking and pin SOT23-3Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

 9.1. Size:347K  silikron
ssf2116ej3.pdfpdf_icon

SSF2160G4

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.2. Size:280K  silikron
ssf2145ch6.pdfpdf_icon

SSF2160G4

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

 9.3. Size:545K  silikron
ssf2129h3.pdfpdf_icon

SSF2160G4

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

Другие MOSFET... SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , SSF2116EJ3 , SSF2122E , SSF2129H3 , SSF2145CH6 , IRFB4227 , SSF2300 , SSF2300A , SSF2300B , SSF2301 , SSF2301A , SSF2301B , SSF2302 , SSF2305 .

History: CHM62A3PAGP | AP2851GO | DMP2002UPS-13 | ME7356-G | IXFN48N55 | KF7N65P | IRF1010H

 

 
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