SSF2300A Todos los transistores

 

SSF2300A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF2300A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

SSF2300A Datasheet (PDF)

 ..1. Size:401K  silikron
 ssf2300a.pdf pdf_icon

SSF2300A

SSF2300A DDESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 7.1. Size:342K  silikron
 ssf2300.pdf pdf_icon

SSF2300A

SSF2300DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 7.2. Size:302K  silikron
 ssf2300b.pdf pdf_icon

SSF2300A

SSF2300B DDESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

 7.3. Size:445K  goodark
 gdssf2300.pdf pdf_icon

SSF2300A

GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

MOSTRAR MÁS

Otros transistores... SSF20NS65F , SSF2112H2 , SSF2116EJ3 , SSF2122E , SSF2129H3 , SSF2145CH6 , SSF2160G4 , SSF2300 , IRF9540 , SSF2300B , SSF2301 , SSF2301A , SSF2301B , SSF2302 , SSF2305 , SSF2306 , SSF2307B .

History: IXTP50N28T | 3SK249

 

 
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