SSF2300A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2300A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de SSF2300A MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSF2300A datasheet

 ..1. Size:401K  silikron
ssf2300a.pdf pdf_icon

SSF2300A

SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 7.1. Size:342K  silikron
ssf2300.pdf pdf_icon

SSF2300A

SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 7.2. Size:302K  silikron
ssf2300b.pdf pdf_icon

SSF2300A

SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R

 7.3. Size:445K  goodark
gdssf2300.pdf pdf_icon

SSF2300A

GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

Otros transistores... SSF20NS65F, SSF2112H2, SSF2116EJ3, SSF2122E, SSF2129H3, SSF2145CH6, SSF2160G4, SSF2300, IRFB4115, SSF2300B, SSF2301, SSF2301A, SSF2301B, SSF2302, SSF2305, SSF2306, SSF2307B