SSF2300A. Аналоги и основные параметры

Наименование производителя: SSF2300A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: SOT23

Аналог (замена) для SSF2300A

- подборⓘ MOSFET транзистора по параметрам

 

SSF2300A даташит

 ..1. Size:401K  silikron
 ssf2300a.pdf pdf_icon

SSF2300A

SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 7.1. Size:342K  silikron
 ssf2300.pdf pdf_icon

SSF2300A

SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 7.2. Size:302K  silikron
 ssf2300b.pdf pdf_icon

SSF2300A

SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R

 7.3. Size:445K  goodark
 gdssf2300.pdf pdf_icon

SSF2300A

GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SSF20NS65F, SSF2112H2, SSF2116EJ3, SSF2122E, SSF2129H3, SSF2145CH6, SSF2160G4, SSF2300, IRFB4115, SSF2300B, SSF2301, SSF2301A, SSF2301B, SSF2302, SSF2305, SSF2306, SSF2307B