SSF2307B Todos los transistores

 

SSF2307B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2307B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 8.6 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: SOT23

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SSF2307B Datasheet (PDF)

1.1. ssf2307b.pdf Size:317K _silikron

SSF2307B
SSF2307B

SSF2307B D DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● High Power

4.1. ssf2300a.pdf Size:401K _silikron

SSF2307B
SSF2307B

SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5

4.2. ssf2301.pdf Size:566K _silikron

SSF2307B
SSF2307B

 SSF2301 Main Product Characteristics: D VDSS -20V G RDS(on) 60mΩ (typ.) S ID -3A ① Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body re

 4.3. ssf2301b.pdf Size:282K _silikron

SSF2307B
SSF2307B

SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Pow

4.4. ssf2301a.pdf Size:275K _silikron

SSF2307B
SSF2307B

SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V ● High Power

 4.5. ssf2300b.pdf Size:302K _silikron

SSF2307B
SSF2307B

SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● V = 20V,I = 4.5A DS D R < 115mΩ @ V =2.5V DS(ON) GS R < 60mΩ @ V =

4.6. ssf2302.pdf Size:387K _silikron

SSF2307B
SSF2307B

SSF2302 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A D 3 RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=

4.7. ssf2300.pdf Size:342K _silikron

SSF2307B
SSF2307B

SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 55mΩ @ VGS=4.5V

4.8. ssf2306.pdf Size:302K _silikron

SSF2307B
SSF2307B

SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V D 3 RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V 2306 ● High Power and current handing capability ● L

4.9. ssf2305.pdf Size:323K _silikron

SSF2307B
SSF2307B

SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 114mΩ @ VGS=-2.5V RDS(ON) < 89mΩ @ VGS=-4.5V ● High Power an

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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