SSF2316E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF2316E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: DFN3X3-8L
Búsqueda de reemplazo de MOSFET SSF2316E
SSF2316E Datasheet (PDF)
ssf2314.pdf
SSF2314 DDESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR
ssf2318e.pdf
SSF2318EDESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)
ssf2312.pdf
SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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