SSF2316E Datasheet and Replacement
Type Designator: SSF2316E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN3X3-8L
SSF2316E substitution
SSF2316E Datasheet (PDF)
ssf2314.pdf
SSF2314 DDESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR
ssf2318e.pdf
SSF2318EDESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)
ssf2312.pdf
SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)
Datasheet: SSF2301A , SSF2301B , SSF2302 , SSF2305 , SSF2306 , SSF2307B , SSF2312 , SSF2314 , 2N7002 , SSF2318E , SSF2336 , SSF2341E , SSF2356G8 , SSF2418E , SSF2418EB , SSF2429 , SSF2437E .
History: AP2307GN-HF | FMV06N60E | FMV12N50ES | SVS11N65K | NCE60NP4035K | SVS11N60TD2
Keywords - SSF2316E MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP2307GN-HF | FMV06N60E | FMV12N50ES | SVS11N65K | NCE60NP4035K | SVS11N60TD2
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