All MOSFET. SSF2316E Datasheet

 

SSF2316E Datasheet and Replacement


   Type Designator: SSF2316E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN3X3-8L
 

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SSF2316E Datasheet (PDF)

 ..1. Size:200K  silikron
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SSF2316E

SSF2316E GENERAL FEATURES VDS = 20V,ID = 7A RDS(ON)

 8.1. Size:229K  silikron
ssf2314.pdf pdf_icon

SSF2316E

SSF2314 DDESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

 8.2. Size:341K  silikron
ssf2318e.pdf pdf_icon

SSF2316E

SSF2318EDESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)

 8.3. Size:281K  silikron
ssf2312.pdf pdf_icon

SSF2316E

SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

Datasheet: SSF2301A , SSF2301B , SSF2302 , SSF2305 , SSF2306 , SSF2307B , SSF2312 , SSF2314 , K4145 , SSF2318E , SSF2336 , SSF2341E , SSF2356G8 , SSF2418E , SSF2418EB , SSF2429 , SSF2437E .

History: FDS6675B | FDS7066N7 | ME7810S-G | BSO200N03 | 2N4352 | 2SJ334 | CEP15P15

Keywords - SSF2316E MOSFET datasheet

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