SSF26NS60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF26NS60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18.2 nS
   Cossⓘ - Capacitancia de salida: 149 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SSF26NS60

SSF26NS60 Datasheet (PDF)

..1. Size:513K silikron
ssf26ns60.pdf

SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w

0.1. Size:310K silikron
ssf26ns60a.pdf

SSF26NS60AMain Product Characteristics VDSS 600V RDS(on) 0.135(typ.) ID 20AMarking and Pin D2PAKSchematic DiagramAssignmentFeatures and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines

9.1. Size:458K silikron
ssf2627.pdf

SSF2627DDESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)

9.2. Size:304K silikron
ssf2637e.pdf

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)

9.3. Size:344K silikron
ssf2610e.pdf

SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)

9.4. Size:599K silikron
ssf2616e.pdf

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

9.5. Size:472K silikron
ssf2649.pdf

SSF2649Main Product Characteristics: D1 D2VDSS -20V G1 G2 RDS(on) 49mohm(typ.)S1 S2ID -7.9A Marking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

9.6. Size:432K goodark
ssf2641s.pdf

SSF2641S 20V P-Channel MOSFET DDESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings. SSchematic Diagram GENERAL FEATURES VDS = -20V,ID = -7.9A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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