Справочник MOSFET. SSF26NS60

 

SSF26NS60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SSF26NS60

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 208 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 20 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 52.1 nC

Время нарастания (tr): 18.2 ns

Выходная емкость (Cd): 149 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.165 Ohm

Тип корпуса: TO220

Аналог (замена) для SSF26NS60

 

SSF26NS60 Datasheet (PDF)

1.1. ssf26ns60.pdf Size:513K _silikron

SSF26NS60
SSF26NS60

 SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w

1.2. ssf26ns60a.pdf Size:310K _silikron

SSF26NS60
SSF26NS60

 SSF26NS60A  Main Product Characteristics VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Marking and Pin D2PAK  Schematic Diagram  Assignment  Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines

 5.1. ssf2641s.pdf Size:432K _upd-mosfet

SSF26NS60
SSF26NS60

 SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings. S Schematic Diagram GENERAL FEATURES ●VDS = -20V,ID = -7.9A RDS(ON) < 70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ●

5.2. ssf2610e.pdf Size:344K _silikron

SSF26NS60
SSF26NS60

SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 8A Schematic diagram RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability

 5.3. ssf2616e.pdf Size:599K _silikron

SSF26NS60
SSF26NS60

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A Schematic diagram RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and c

5.4. ssf2637e.pdf Size:304K _silikron

SSF26NS60
SSF26NS60

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V Schematic diagram RDS(ON) < 43mΩ @ VGS=-4.5V D D D D 8 7 6 5 ESD Rating:3000V HBM 2637E 4414 ● High Power and current handing capa

 5.5. ssf2627.pdf Size:458K _silikron

SSF26NS60
SSF26NS60

SSF2627 D DESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). S Schematic diagram GENERAL FEATURES ●VDS = -20V,ID = -5.4A RDS(ON) < 48mΩ @ VGS=-2.5V RDS(ON) < 33mΩ @ VGS=-4.5V ● High Po

5.6. ssf2649.pdf Size:472K _silikron

SSF26NS60
SSF26NS60

 SSF2649  Main Product Characteristics: D1 D2 VDSS -20V G1 G2 RDS(on) 49mohm(typ.) S1 S2 ID -7.9A Marking and pin SOP-8 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

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