SSF2N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF2N60D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de SSF2N60D MOSFET
SSF2N60D Datasheet (PDF)
ssf2n60d.pdf

SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8 (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf2n60d2.pdf

SSF2N60D2 Main Product Characteristics: VDSS 600V RDS(on) 3.7 (typ.) ID 2A TO-252 Marking a nd pin Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf2n60d1.pdf

SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS(on) 3.9 (typ.) ID 2A TO-252 Marking and Pin S c he mati c Diag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re
ssf2n60.pdf

SSF2N60Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.)ID 2ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temper
Otros transistores... SSF2701 , SSF2810EH2 , SSF2814E , SSF2814EH2 , SSF2816E , SSF2816EB , SSF2841 , SSF2N60 , 18N50 , SSF2N60D2 , SSF2N60F , SSF2N60G , SSF3002EG1 , SSF3018 , SSF3018D , SSF3028C1 , SSF3036C .
History: NTMFD4C87N | PHP45N03LT | AP4435GJ | IPS050N03LG | MMBFJ111 | AP2605GY-HF | IPB03N03LBG
History: NTMFD4C87N | PHP45N03LT | AP4435GJ | IPS050N03LG | MMBFJ111 | AP2605GY-HF | IPB03N03LBG



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