SSF3416 Todos los transistores

 

SSF3416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF3416

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 75 pF

Resistencia drenaje-fuente RDS(on): 0.0185 Ohm

Empaquetado / Estuche: SOT23-6

Búsqueda de reemplazo de MOSFET SSF3416

 

SSF3416 Datasheet (PDF)

1.1. ssf3416.pdf Size:428K _silikron

SSF3416
SSF3416

SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free p

5.1. ssf3420.pdf Size:360K _silikron

SSF3416
SSF3416

SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free p

5.2. ssf3428.pdf Size:288K _silikron

SSF3416
SSF3416

SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is a

 5.3. ssf3402.pdf Size:303K _silikron

SSF3416
SSF3416

SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface

Otros transistores... SSF3322 , SSF3324 , SSF3338 , SSF3339 , SSF3341 , SSF3341L , SSF3365 , SSF3402 , BUK455-200A , SSF3420 , SSF3428 , SSF3604 , SSF3605S , SSF3606 , SSF3610 , SSF3610E , SSF3611E .

 

 
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