All MOSFET. SSF3416 Datasheet

 

SSF3416 Datasheet and Replacement


   Type Designator: SSF3416
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: SOT23-6
 

 SSF3416 substitution

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SSF3416 Datasheet (PDF)

 ..1. Size:428K  silikron
 ssf3416.pdf pdf_icon

SSF3416

SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

 9.1. Size:360K  silikron
 ssf3420.pdf pdf_icon

SSF3416

SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = 30V,ID =6.3A RDS(ON)

 9.2. Size:288K  silikron
 ssf3428.pdf pdf_icon

SSF3416

SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON)

 9.3. Size:303K  silikron
 ssf3402.pdf pdf_icon

SSF3416

SSF3402 DDESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagram GENERAL FEATURES VDS = 30V,ID = 5A RDS(ON)

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Datasheet: SSF3322 , SSF3324 , SSF3338 , SSF3339 , SSF3341 , SSF3341L , SSF3365 , SSF3402 , MMIS60R580P , SSF3420 , SSF3428 , SSF3604 , SSF3605S , SSF3606 , SSF3610 , SSF3610E , SSF3611E .

History: SLD60R380S2

Keywords - SSF3416 MOSFET datasheet

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