SSF3416 Specs and Replacement

Type Designator: SSF3416

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm

Package: SOT23-6

SSF3416 substitution

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SSF3416 datasheet

 ..1. Size:428K  silikron
 ssf3416.pdf pdf_icon

SSF3416

SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON) ... See More ⇒

 9.1. Size:360K  silikron
 ssf3420.pdf pdf_icon

SSF3416

SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =6.3A RDS(ON) ... See More ⇒

 9.2. Size:288K  silikron
 ssf3428.pdf pdf_icon

SSF3416

SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON) ... See More ⇒

 9.3. Size:303K  silikron
 ssf3402.pdf pdf_icon

SSF3416

SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES VDS = 30V,ID = 5A RDS(ON) ... See More ⇒

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Detailed specifications: SSF3322, SSF3324, SSF3338, SSF3339, SSF3341, SSF3341L, SSF3365, SSF3402, 7N60, SSF3420, SSF3428, SSF3604, SSF3605S, SSF3606, SSF3610, SSF3610E, SSF3611E

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