SSF3610E Todos los transistores

 ..1. Size:578K  silikron
 ssf3610e.pdf

SSF3610E Main Product Characteristics VDSS 25 V SSF3610E SSF3610E RDS(on) 6.8 m (typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an

 7.1. Size:496K  silikron
 ssf3610.pdf

SSF3610 D DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)

 8.1. Size:442K  silikron
 ssf3612.pdf

SSF3612 D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)

 8.2. Size:587K  silikron
 ssf3616.pdf

SSF3616 D DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

 8.3. Size:327K  silikron
 ssf3617.pdf

SSF3617 D DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)

 8.4. Size:421K  silikron
 ssf3615.pdf

SSF3615 D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

 8.5. Size:324K  silikron
 ssf3611e.pdf

SSF3611E Main Product Characteristics VDSS -30 V RDS(on) 10.6 m (typ.) ID -12A Marking and pin SOP-8 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.6. Size:453K  goodark
 ssf3612e.pdf

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem