Справочник MOSFET. SSF3610E

 

SSF3610E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF3610E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.6 ns
   Cossⓘ - Выходная емкость: 353 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для SSF3610E

 

 

SSF3610E Datasheet (PDF)

 ..1. Size:578K  silikron
 ssf3610e.pdf

SSF3610E SSF3610E

SSF3610E Main Product Characteristics: VDSS 25 V SSF3610ESSF3610E RDS(on) 6.8 m(typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an

 7.1. Size:496K  silikron
 ssf3610.pdf

SSF3610E SSF3610E

SSF3610 DDESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)

 8.1. Size:442K  silikron
 ssf3612.pdf

SSF3610E SSF3610E

SSF3612 DDESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)

 8.2. Size:587K  silikron
 ssf3616.pdf

SSF3610E SSF3610E

SSF3616 DDESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

 8.3. Size:327K  silikron
 ssf3617.pdf

SSF3610E SSF3610E

SSF3617 DDESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)

 8.4. Size:421K  silikron
 ssf3615.pdf

SSF3610E SSF3610E

SSF3615 DDESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

 8.5. Size:324K  silikron
 ssf3611e.pdf

SSF3610E SSF3610E

SSF3611EMain Product Characteristics: VDSS -30 V RDS(on) 10.6 m(typ.) ID -12AMarking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.6. Size:453K  goodark
 ssf3612e.pdf

SSF3610E SSF3610E

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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