SSF3616 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF3616
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET SSF3616

SSF3616 Datasheet (PDF)

..1. Size:587K silikron
ssf3616.pdf

SSF3616 DDESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

8.1. Size:442K silikron
ssf3612.pdf

SSF3612 DDESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)

8.2. Size:327K silikron
ssf3617.pdf

SSF3617 DDESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)

8.3. Size:496K silikron
ssf3610.pdf

SSF3610 DDESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)

8.4. Size:421K silikron
ssf3615.pdf

SSF3615 DDESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

8.5. Size:578K silikron
ssf3610e.pdf

SSF3610E Main Product Characteristics: VDSS 25 V SSF3610ESSF3610E RDS(on) 6.8 m(typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an

8.6. Size:324K silikron
ssf3611e.pdf

SSF3611EMain Product Characteristics: VDSS -30 V RDS(on) 10.6 m(typ.) ID -12AMarking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

8.7. Size:453K goodark
ssf3612e.pdf

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDPF10N50FT

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