SSF4031C1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF4031C1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 248 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO252

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SSF4031C1 Datasheet (PDF)

..1. Size:495K silikron
ssf4031c1.pdf

SSF4031C1Main Product Characteristics:V -40VDSSR (on) 24mohm(typ.)DSI -30ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 100%Ava

8.1. Size:257K silikron
ssf4032ch3.pdf

SSF4032CH3Main Product Characteristics:NMOS PMOSVDSS 40V -40VRDS(on) 16mohm(typ.) 25mohm(typ.)ID 6A -4.5ASOP-8 Schematic diagramBottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 1

9.1. Size:397K silikron
ssf4015.pdf

SSF4015 Main Product Characteristics: DVDSS -40V SSF3612DSSF3612DSSF4015SSF4035 G RDS(on) 11m (typ.) ID -40A STO-252 (D-PAK) Marking a nd p in S che mati c di agra m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low g

9.2. Size:512K silikron
ssf4004s.pdf

SSF4004S Main Product Characteristics VDSS 40V RDS(on) 2.3m (typ.) ID 180A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

9.3. Size:1038K silikron
ssf4004.pdf

SSF4004 Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF4004 is a new generation of high voltage and low current NChannel en

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