Справочник MOSFET. SSF4031C1

 

SSF4031C1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF4031C1
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 248 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SSF4031C1

 

 

SSF4031C1 Datasheet (PDF)

 ..1. Size:495K  silikron
ssf4031c1.pdf

SSF4031C1
SSF4031C1

SSF4031C1Main Product Characteristics:V -40VDSSR (on) 24mohm(typ.)DSI -30ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 100%Ava

 8.1. Size:257K  silikron
ssf4032ch3.pdf

SSF4031C1
SSF4031C1

SSF4032CH3Main Product Characteristics:NMOS PMOSVDSS 40V -40VRDS(on) 16mohm(typ.) 25mohm(typ.)ID 6A -4.5ASOP-8 Schematic diagramBottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 1

 9.1. Size:397K  silikron
ssf4015.pdf

SSF4031C1
SSF4031C1

SSF4015 Main Product Characteristics: DVDSS -40V SSF3612DSSF3612DSSF4015SSF4035 G RDS(on) 11m (typ.) ID -40A STO-252 (D-PAK) Marking a nd p in S che mati c di agra m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low g

 9.2. Size:512K  silikron
ssf4004s.pdf

SSF4031C1
SSF4031C1

SSF4004S Main Product Characteristics VDSS 40V RDS(on) 2.3m (typ.) ID 180A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.3. Size:1038K  silikron
ssf4004.pdf

SSF4031C1
SSF4031C1

SSF4004 Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF4004 is a new generation of high voltage and low current NChannel en

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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