SSF4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF4N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220

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SSF4N60 Datasheet (PDF)

..1. Size:649K silikron
ssf4n60.pdf

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode

0.1. Size:510K silikron
ssf4n60g.pdf

SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

0.2. Size:518K silikron
ssf4n60d.pdf

SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

0.3. Size:524K silikron
ssf4n60f.pdf

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 3N203A

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