SSF4N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF4N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.3 nS

Cossⓘ - Capacitancia de salida: 59 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: TO220F

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SSF4N60F datasheet

 ..1. Size:524K  silikron
 ssf4n60f.pdf pdf_icon

SSF4N60F

SSF4N60F Main Product Characteristics VDSS 600V RDS(on) 1.9 (typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:510K  silikron
 ssf4n60g.pdf pdf_icon

SSF4N60F

SSF4N60G Main Product Characteristics VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.2. Size:518K  silikron
 ssf4n60d.pdf pdf_icon

SSF4N60F

SSF4N60D Main Product Characteristics VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.3. Size:649K  silikron
 ssf4n60.pdf pdf_icon

SSF4N60F

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage N Channel enhancement mode

MOSTRAR MÁS

Otros transistores... SSF4607D, SSF4624, SSF4703, SSF4703DC, SSF47NS60H, SSF4953, SSF4N60, SSF4N60D, 7N65, SSF4N60G, SSF4NS60D, SSF53A0E, SSF5506, SSF5508A, SSF5508U, SSF5N50D, SSF5N60D