Справочник MOSFET. SSF4N60F

 

SSF4N60F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF4N60F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16.3 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SSF4N60F

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF4N60F Datasheet (PDF)

 ..1. Size:524K  silikron
ssf4n60f.pdfpdf_icon

SSF4N60F

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:510K  silikron
ssf4n60g.pdfpdf_icon

SSF4N60F

SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.2. Size:518K  silikron
ssf4n60d.pdfpdf_icon

SSF4N60F

SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.3. Size:649K  silikron
ssf4n60.pdfpdf_icon

SSF4N60F

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode

Другие MOSFET... SSF4607D , SSF4624 , SSF4703 , SSF4703DC , SSF47NS60H , SSF4953 , SSF4N60 , SSF4N60D , STP75NF75 , SSF4N60G , SSF4NS60D , SSF53A0E , SSF5506 , SSF5508A , SSF5508U , SSF5N50D , SSF5N60D .

History: ASDM65N18S | PTW90N20 | SFG019N100C3

 

 
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