SSF5506 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF5506
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 672 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SSF5506 MOSFET
SSF5506 Datasheet (PDF)
ssf5506.pdf

SSF5506Main Product Characteristics: VDSS 55V RDS(on) 3.8m(typ.) ID 140AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o
ssf5508.pdf

SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec
ssf5508u.pdf

SSF5508UMain Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.)ID 110AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf5508a.pdf

SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohmTypID 110A Features and Benefits: SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the lat
Otros transistores... SSF47NS60H , SSF4953 , SSF4N60 , SSF4N60D , SSF4N60F , SSF4N60G , SSF4NS60D , SSF53A0E , 2N7000 , SSF5508A , SSF5508U , SSF5N50D , SSF5N60D , SSF5N60F , SSF5N60G , SSF5NS50U , SSF5NS60UD .
History: AP95T07AGP | MEM2310X | SI2312A | AO3423A | CEB13N5A | WML12N105C2
History: AP95T07AGP | MEM2310X | SI2312A | AO3423A | CEB13N5A | WML12N105C2



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