SSF5506 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF5506
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 140 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 82 ns
Cossⓘ - Выходная емкость: 672 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO220
Аналог (замена) для SSF5506
SSF5506 Datasheet (PDF)
ssf5506.pdf

SSF5506Main Product Characteristics: VDSS 55V RDS(on) 3.8m(typ.) ID 140AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o
ssf5508.pdf

SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec
ssf5508u.pdf

SSF5508UMain Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.)ID 110AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf5508a.pdf

SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohmTypID 110A Features and Benefits: SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the lat
Другие MOSFET... SSF47NS60H , SSF4953 , SSF4N60 , SSF4N60D , SSF4N60F , SSF4N60G , SSF4NS60D , SSF53A0E , 2N7000 , SSF5508A , SSF5508U , SSF5N50D , SSF5N60D , SSF5N60F , SSF5N60G , SSF5NS50U , SSF5NS60UD .
History: WM10N02M | NCEP40P80D
History: WM10N02M | NCEP40P80D



Список транзисторов
Обновления
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
a968 transistor | f1010e mosfet | 2sc3883 | c3306 datasheet | hy3810 | c711 transistor | k3599 transistor datasheet | 2sc1735