SSF5N50D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF5N50D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15.8 nS
Cossⓘ - Capacitancia de salida: 67 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de SSF5N50D MOSFET
- Selecciónⓘ de transistores por parámetros
SSF5N50D datasheet
..1. Size:521K silikron
ssf5n50d.pdf 
SSF5N50D Main Product Characteristics VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.3. Size:459K silikron
ssf5ns65ug.pdf
SSF5NS65UG Main Product Characteristics VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS65UG series MOSFETs is a new technology,
9.4. Size:480K silikron
ssf5ns50u.pdf
SSF5NS50U Main Product Characteristics VDSS 500V RDS(on) 0.55 (typ.) ID 5A Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS50U series MOSFETs is a new technology, which
9.5. Size:430K silikron
ssf5ns70ug.pdf
SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi
9.6. Size:485K silikron
ssf5ns60ud.pdf
SSF5NS60UD Main Product Characteristics VDSS 600V RDS(on) 0.73 (typ.) ID 5A TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS60UD series MOSFETs is a new tec
9.7. Size:547K silikron
ssf5ns70g-d-f.pdf
SSF5NS70G/D/F Main Product Characteristics VDSS 700V RDS(on) 1.23 (typ.) ID 5A 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70G/D/F s
9.8. Size:477K silikron
ssf5ns65g.pdf
SSF5NS65G Main Product Characteristics VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS65G series MOSFETs is a new te
9.9. Size:424K silikron
ssf5ns70gbp.pdf
SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3 (typ.) ID 5A TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70GB series MOSFETs is a new technology, which com
9.10. Size:483K silikron
ssf5n60d.pdf
SSF5N60D Main Product Characteristics VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.12. Size:469K silikron
ssf5ns65ud.pdf
SSF5NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS65UD series MOSFETs is a new technology,
9.13. Size:491K silikron
ssf5ns70uf.pdf
SSF5NS70UF Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UF series MOSFETs is a new technology, which c
9.14. Size:491K silikron
ssf5n60g.pdf
SSF5N60G Main Product Characteristics VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.15. Size:446K silikron
ssf5ns65uf.pdf
SSF5NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS65UF series MOSFETs is a new technology, which
Otros transistores... SSF4N60D, SSF4N60F, SSF4N60G, SSF4NS60D, SSF53A0E, SSF5506, SSF5508A, SSF5508U, 2N7002, SSF5N60D, SSF5N60F, SSF5N60G, SSF5NS50U, SSF5NS60UD, SSF5NS65G, SSF5NS65UD, SSF5NS65UF
