SSF6072G5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF6072G5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.7 nS

Cossⓘ - Capacitancia de salida: 49 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT223

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SSF6072G5 datasheet

 ..1. Size:498K  silikron
ssf6072g5.pdf pdf_icon

SSF6072G5

SSF6072G5 Main Product Characteristics VDSS 60V SSF6072G5 SSF6072G5 6072 6072 RDS(on) 67m (typ.) ID 4A Marking and pin SOT-223 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for DC-DC and DC-AC converters, load switching and general purpose applications Ultra low on-resistance with low gate c

 9.1. Size:503K  silikron
ssf6007.pdf pdf_icon

SSF6072G5

SSF6007 Main Product Characteristics VDSS -50V 6007 6007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 9.2. Size:259K  silikron
ssf6014j7.pdf pdf_icon

SSF6072G5

SSF6014J7 Main Product Characteristics VDSS 60V RDS(on) 11m (typ.) ID 40A PQFN 5x6 Pin Assignment Schematic Diagram Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

 9.3. Size:605K  silikron
ssf6010.pdf pdf_icon

SSF6072G5

SSF6010 Feathers ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description The SSF6010 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

Otros transistores... SSF6010, SSF6010A, SSF6014, SSF6014A, SSF6014D, SSF6014J7, SSF6014J8, SSF6025, RFP50N06, SSF6092G1, SSF6114, SSF6401, SSF6646, SSF6670, SSF6808, SSF6808A, SSF6808D