SSF6072G5 Todos los transistores

 

SSF6072G5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF6072G5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.7 nS
   Cossⓘ - Capacitancia de salida: 49 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

SSF6072G5 Datasheet (PDF)

 ..1. Size:498K  silikron
 ssf6072g5.pdf pdf_icon

SSF6072G5

SSF6072G5 Main Product Characteristics: VDSS 60V SSF6072G5SSF6072G560726072 RDS(on) 67m (typ.) ID 4A Marking and pin SOT-223 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for DC-DC and DC-AC converters, load switching and general purpose applications Ultra low on-resistance with low gate c

 9.1. Size:503K  silikron
 ssf6007.pdf pdf_icon

SSF6072G5

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 9.2. Size:259K  silikron
 ssf6014j7.pdf pdf_icon

SSF6072G5

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

 9.3. Size:605K  silikron
 ssf6010.pdf pdf_icon

SSF6072G5

SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6800SM | BLM05N03-D

 

 
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