SSF6N60G Todos los transistores

 ..1. Size:443K  silikron
 ssf6n60g.pdf

SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

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 ssf6n80a.pdf

SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

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 ssf6n70a.pdf

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 ssf6n90a.pdf

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 ssf6n80f.pdf

SSF6N80F Main Product Characteristics VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco

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 ssf6n80a6.pdf

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 ssf6ns70ugx.pdf

SSF6NS70UGX Main Product Characteristics VDSS 700V RDS(on) 1.08 (typ.) ID 6A IPAK-NX Marking and Pi n Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UGX series MOSFETs is a new technology, whi

 9.7. Size:411K  silikron
 ssf6n70gm.pdf

SSF6N70GM Main Product Characteristics VDSS 700V RDS(on) 1.49 (typ.) ID 6A IPAKM-S2 Marking and p in S che ma ti c di ag ra m (Details in page6) Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

 9.8. Size:451K  silikron
 ssf6n70g.pdf

SSF6N70G Main Product Characteristics VDSS 700V RDS(on) 1.49 (typ.) ID 6A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.9. Size:457K  silikron
 ssf6ns70ug.pdf

SSF6NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UG series MOSFETs is a new technology,

 9.10. Size:478K  silikron
 ssf6n80g.pdf

SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.11. Size:453K  silikron
 ssf6ns65uf.pdf

SSF6NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.78 (typ.) ID 6A Marking and pin TO-220F Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS65UF series MOSFETs is a new technology, whic

 9.12. Size:555K  silikron
 ssf6n40d.pdf

SSF6N40D Main Product Characteristics VDSS 400V RDS(on) 0.85 (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 9.13. Size:465K  silikron
 ssf6ns70ud.pdf

SSF6NS70UD Main Product Characteristics VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UD series MOSFETs is a new technology,

 9.14. Size:450K  silikron
 ssf6ns70ugs.pdf

SSF6NS70UGS Main Product Characteristics VDSS 700V RDS(on) 1.1 (typ.) ID 6A TO-251S Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UGS series MOSFETs is a new technology, whic

 9.15. Size:543K  silikron
 ssf6ns70g-d-f.pdf

SSF6NS70G/D/F Main Product Characteristics VDSS 700V RDS(on) 1.2 (typ.) ID 5.2A 251 TO-252 TO- TO-220F Schematic diagram SSF6NS70G SSF6NS70D SSF6NS70F Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70G/D/F