SSF6N60G Specs and Replacement

Type Designator: SSF6N60G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.9 nS

Cossⓘ - Output Capacitance: 89 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: IPAK

SSF6N60G substitution

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SSF6N60G datasheet

 ..1. Size:443K  silikron
ssf6n60g.pdf pdf_icon

SSF6N60G

SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

 9.1. Size:263K  1
ssf6n80a.pdf pdf_icon

SSF6N60G

SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

 9.2. Size:213K  1
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SSF6N60G

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SSF6N60G

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Detailed specifications: SSF6670, SSF6808, SSF6808A, SSF6808D, SSF6814, SSF6816, SSF6908, SSF6N40D, AO3400A, SSF6N70G, SSF6N70GM, SSF6N80A6, SSF6N80F, SSF6N80G, SSF6NS65UF, SSF6NS70G, SSF6NS70D

Keywords - SSF6N60G MOSFET specs

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