SSF7507 Todos los transistores

 

SSF7507 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF7507

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 241 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 127.7 nC

Tiempo de elevación (tr): 19.9 nS

Conductancia de drenaje-sustrato (Cd): 535 pF

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: TO220

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SSF7507 Datasheet (PDF)

1.1. ssf7507.pdf Size:415K _silikron

SSF7507
SSF7507

 SSF7507  Main Product Characteristics: VDSS 75V RDS(on) 5mohm(typ.) ID 110A TO220 Marking and pin Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃

4.1. ssf7508a.pdf Size:383K _silikron

SSF7507
SSF7507

 SSF7508A  Main Product Characteristics: VDSS 75V RDS(on) 6mΩ (typ.) ID 100A D2PAK Marking and pin Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

4.2. ssf7505.pdf Size:417K _silikron

SSF7507
SSF7507

 SSF7505  Main Product Characteristics: VDSS 75V RDS(on) 3.3mohm(typ.) ID 170A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 4.3. ssf7504.pdf Size:426K _silikron

SSF7507
SSF7507

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7mΩ(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current N–Channel enhancemen

4.4. ssf7504a7.pdf Size:470K _silikron

SSF7507
SSF7507

 SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5mΩ(typ.) 2~3,5~7 Source 4,8 Drain ID 220A ① Schematic Diagram TO-263-7L Pin Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching

 4.5. ssf7504a.pdf Size:396K _silikron

SSF7507
SSF7507

SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7mΩ(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current N–Channel enhancem

4.6. ssf7509a.pdf Size:396K _silikron

SSF7507
SSF7507

 SSF7509A  Main Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Marking and pin D2PAK Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

4.7. ssf7504h.pdf Size:568K _silikron

SSF7507
SSF7507

 SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9mΩ(typ.) ID 220A ① Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

4.8. ssf7509j7.pdf Size:300K _silikron

SSF7507
SSF7507

 SSF7509J7  Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.) ID 70A Marking and pin PQFN5*6 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

4.9. ssf7509b.pdf Size:482K _silikron

SSF7507
SSF7507

 SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3mΩ(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

4.10. ssf7509.pdf Size:392K _silikron

SSF7507
SSF7507

SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5mΩ(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current N–Channel enhancement

4.11. ssf7508.pdf Size:513K _silikron

SSF7507
SSF7507

 SSF7508 Main Product Characteristics: VDSS 75V RDS(on) 6mΩ (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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