SSF7507 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF7507
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 241 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 127.7 nC
trⓘ - Время нарастания: 19.9 ns
Cossⓘ - Выходная емкость: 535 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO220
SSF7507 Datasheet (PDF)
ssf7507.pdf
SSF7507Main Product Characteristics: VDSS 75V RDS(on) 5mohm(typ.)ID 110ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7504.pdf
SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen
ssf7509b.pdf
SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7505.pdf
SSF7505Main Product Characteristics: VDSS 75V RDS(on) 3.3mohm(typ.)ID 170AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7508a.pdf
SSF7508AMain Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100AD2PAKMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7504h.pdf
SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9m(typ.) ID 220A Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf7509a.pdf
SSF7509AMain Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.)ID 80AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7509j7.pdf
SSF7509J7Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.)ID 70AMarking and pin PQFN5*6Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7504a7.pdf
SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5m(typ.) 2~3,5~7 Source 4,8 Drain ID 220A Schematic Diagram TO-263-7L Pin Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching
ssf7508.pdf
SSF7508 Main Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7504a.pdf
SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current NChannel enhancem
ssf7509.pdf
SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current NChannel enhancement
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918