Справочник MOSFET. SSF7507

 

SSF7507 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF7507
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 241 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 19.9 ns
   Cossⓘ - Выходная емкость: 535 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

SSF7507 Datasheet (PDF)

 ..1. Size:415K  silikron
ssf7507.pdfpdf_icon

SSF7507

SSF7507Main Product Characteristics: VDSS 75V RDS(on) 5mohm(typ.)ID 110ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 8.1. Size:426K  silikron
ssf7504.pdfpdf_icon

SSF7507

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen

 8.2. Size:482K  silikron
ssf7509b.pdfpdf_icon

SSF7507

SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.3. Size:417K  silikron
ssf7505.pdfpdf_icon

SSF7507

SSF7505Main Product Characteristics: VDSS 75V RDS(on) 3.3mohm(typ.)ID 170AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

 

 
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