SSF7NS70UGX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF7NS70UGX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 41 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 8.5 nS
Conductancia de drenaje-sustrato (Cd): 21 pF
Resistencia entre drenaje y fuente RDS(on): 0.85 Ohm
Paquete / Cubierta: IPAK-NX
Búsqueda de reemplazo de MOSFET SSF7NS70UGX
SSF7NS70UGX Datasheet (PDF)
ssf7ns70ugx.pdf
SSF7NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A IPAK-NX Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UGX series MOSFETs is a new technology, whic
ssf7ns70ug.pdf
SSF7NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UG series MOSFETs is a new technology,
ssf7ns65g.pdf
SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t
ssf7ns60d.pdf
SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56 (typ.) ID 7A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t
ssf7ns60f.pdf
SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54(typ.) ID 7A Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno
ssf7ns65uf.pdf
SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which
ssf7ns65ud.pdf
SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi
ssf7ns65ug.pdf
SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,
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