SSF7NS70UGX MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF7NS70UGX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: IPAK-NX
SSF7NS70UGX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF7NS70UGX Datasheet (PDF)
ssf7ns70ugx.pdf
SSF7NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A IPAK-NX Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UGX series MOSFETs is a new technology, whic
ssf7ns70ug.pdf
SSF7NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UG series MOSFETs is a new technology,
ssf7ns65g.pdf
SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t
ssf7ns60d.pdf
SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56 (typ.) ID 7A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t
ssf7ns60f.pdf
SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54(typ.) ID 7A Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno
ssf7ns65uf.pdf
SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which
ssf7ns65ud.pdf
SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi
ssf7ns65ug.pdf
SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SSF6NS70D | STP40N05FI
History: SSF6NS70D | STP40N05FI
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