SSPL7509 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL7509
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76.9 nS
Cossⓘ - Capacitancia de salida: 909 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de SSPL7509 MOSFET
- Selecciónⓘ de transistores por parámetros
SSPL7509 datasheet
sspl7509.pdf
SSPL7509 Main Product Characteristics VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl7508.pdf
SSPL7508 Main Product Characteristics VDSS 75V RDS(on) 6.25mohm(typ.) ID 120A Mar ki ng a nd p in Sc hemat ic d ia gr am TO220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl7510.pdf
SSPL7510 Main Product Characteristics VDSS 75V RDS(on) 9.5m (typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... SSF7NS60F, SSF7NS65G, SSF7NS65UD, SSF7NS65UF, SSF7NS65UG, SSF7NS70UG, SSF7NS70UGX, SSPL7508, AON6414A, SSPL7510, SSPL6005, SSPL6022, SSPL6040, SSPL6040D, SSF80100, SSF8205, SSF8205A
History: SSF7NS70UG
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