All MOSFET. SSPL7509 Datasheet

 

SSPL7509 Datasheet and Replacement


   Type Designator: SSPL7509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 76.9 nS
   Cossⓘ - Output Capacitance: 909 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
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SSPL7509 Datasheet (PDF)

 ..1. Size:643K  silikron
 sspl7509.pdf pdf_icon

SSPL7509

SSPL7509 Main Product Characteristics: VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:645K  silikron
 sspl7508.pdf pdf_icon

SSPL7509

SSPL7508 Main Product Characteristics: VDSS 75V RDS(on) 6.25mohm(typ.) ID 120A Mar ki ng a nd p in Sc hemat ic d ia gr am TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 8.1. Size:642K  silikron
 sspl7510.pdf pdf_icon

SSPL7509

SSPL7510 Main Product Characteristics: VDSS 75V RDS(on) 9.5m(typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

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History: MTN3418N3 | APT10021JFLL | IRFB5620 | SM4186T9RL | WMM07N65C4 | SSW65R190S2 | NCE30P12BS

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