SSF8205UH2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF8205UH2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 18 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TSSOP8

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SSF8205UH2 Datasheet (PDF)

..1. Size:612K silikron
ssf8205uh2.pdf

SSF8205UH2Main Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin TSSOP-8 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast swit

6.1. Size:599K silikron
ssf8205u.pdf

SSF8205UMain Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

7.1. Size:450K silikron
ssf8205a.pdf

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

7.2. Size:683K silikron
ssf8205.pdf

SSF8205 Main Product Characteristics: D1D2VDSS 20V G1 G2S1 S2 RDS(on) 20mohm(typ.) ID 4A Marking and pin SOT23-6 Sc he mati c di a gram A s si gnment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge F

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