SSF8N65 Todos los transistores

 

SSF8N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF8N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 145 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 8.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 78 nS

Conductancia de drenaje-sustrato (Cd): 125 pF

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: TO220

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SSF8N65 Datasheet (PDF)

1.1. ssf8n65.pdf Size:434K _silikron

SSF8N65
SSF8N65

SSF8N65 Features VDSS = 650V ■ Extremely high dv/dt capability ID = 8A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.95Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage N–Channel enhancement mod

4.1. ssf8n60.pdf Size:434K _silikron

SSF8N65
SSF8N65

SSF8N60 Features VDSS = 600V ■ Extremely high dv/dt capability ID = 8A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage N–Channel enhancement mod

 5.1. ssf8n90a.pdf Size:935K _samsung

SSF8N65
SSF8N65

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.2. ssf8n80a.pdf Size:938K _samsung

SSF8N65
SSF8N65

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

 5.3. ssf8n80f.pdf Size:526K _silikron

SSF8N65
SSF8N65

 SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3Ω (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

5.4. ssf8n80zh.pdf Size:562K _silikron

SSF8N65
SSF8N65

 SSF8N80ZF  Main Product Characteristics: VDSS 800V RDS(on) 1.1Ω (typ.) ID 8A TO-220F Marking and pin Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

 5.5. ssf8n80.pdf Size:531K _silikron

SSF8N65
SSF8N65

 SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38Ω(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

5.6. ssf8np60u.pdf Size:482K _silikron

SSF8N65
SSF8N65

 SSF8NP60U Main Product Characteristics: VDSS 600V RDS(on) 0.73Ω (typ.) ID 8A ① Marking and p in Schematic diagram TO-220 Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: It utilizes the latest processing techniques to achieve

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