SSF8N80F Todos los transistores

 

SSF8N80F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF8N80F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 121 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm
   Paquete / Cubierta: TO220F
 

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SSF8N80F Datasheet (PDF)

 ..1. Size:526K  silikron
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SSF8N80F

SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 7.1. Size:938K  samsung
ssf8n80a.pdf pdf_icon

SSF8N80F

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 7.2. Size:562K  silikron
ssf8n80zh.pdf pdf_icon

SSF8N80F

SSF8N80ZFMain Product Characteristics: VDSS 800V RDS(on) 1.1 (typ.) ID 8ATO-220FMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.3. Size:531K  silikron
ssf8n80.pdf pdf_icon

SSF8N80F

SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

Otros transistores... SSF8421 , SSF8509 , SSF8521 , SSF8810 , SSF8822 , SSF8N60 , SSF8N65 , SSF8N80 , 2SK3568 , SSF8N80ZH , SSF8NP60U , SSF9435 , SSF9926 , SSF9N90ZH , SSFK3204 , SSFK3208 , SSFD3004 .

History: KIA7N60H-262 | NP33N075YDF | IPN80R750P7 | NP110N03PUG | TK8R2A06PL | SSB80R240SFD | IRLSL4030PBF

 

 
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