SSFN2220 Todos los transistores

 

SSFN2220 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSFN2220

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 1000 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: DFN2X2-8L

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SSFN2220 Datasheet (PDF)

1.1. ssfn2220.pdf Size:184K _silikron

SSFN2220
SSFN2220

SSFN2220 DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 6A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4.5V ● High

4.1. ssfn2269.pdf Size:234K _silikron

SSFN2220
SSFN2220

SSFN2269 DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-3.3A Schematic diagram RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mo

 5.1. ssfn2569.pdf Size:496K _silikron

SSFN2220
SSFN2220

 SSFN2569 Main Product Characteristics: D1 D2 VDSS -20V G1 G2 RDS(on) 55mΩ (typ.) S1 S2 ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body rec

5.2. ssfn2316e.pdf Size:202K _silikron

SSFN2220
SSFN2220

SSFN2316E GENERAL FEATURES ● VDS = 20V,ID = 6.5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V Schematic diagram RDS(ON) < 23mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Pin Assignment Application ●Battery protection ●Load s

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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