SSFN2220 Specs and Replacement
Type Designator: SSFN2220
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: DFN2X2-8L
SSFN2220 substitution
- MOSFET ⓘ Cross-Reference Search
SSFN2220 datasheet
ssfn2220.pdf
SSFN2220 DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A RDS(ON) ... See More ⇒
ssfn2269.pdf
SSFN2269 DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-3.3A Schematic diagram RDS(ON) ... See More ⇒
ssfn2316e.pdf
SSFN2316E GENERAL FEATURES VDS = 20V,ID = 6.5A RDS(ON) ... See More ⇒
ssfn2569.pdf
SSFN2569 Main Product Characteristics D1 D2 VDSS -20V G1 G2 RDS(on) 55m (typ.) S1 S2 ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec... See More ⇒
Detailed specifications: SSFD6035, SSFD6046, SSFM1022, SSFM2506, SSFM3008, SSFM3008H1, SSFM3008L, SSFM8005, IRFP250, SSFN2269, SSFN2316E, SSFN2569, SSFN3313, SSFN3317, SSFN6816, SSFT3904, SSFT3904J7-HF
Keywords - SSFN2220 MOSFET specs
SSFN2220 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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