SSFN2220 Datasheet and Replacement
Type Designator: SSFN2220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: DFN2X2-8L
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SSFN2220 Datasheet (PDF)
ssfn2220.pdf

SSFN2220DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A RDS(ON)
ssfn2269.pdf

SSFN2269DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-3.3A Schematic diagram RDS(ON)
ssfn2569.pdf

SSFN2569 Main Product Characteristics: D1D2VDSS -20V G1 G2 RDS(on) 55m (typ.) S1 S2ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: VP0300M | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL
Keywords - SSFN2220 MOSFET datasheet
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History: VP0300M | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL



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