SSFT3904J7-HF Todos los transistores

 

SSFT3904J7-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSFT3904J7-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 68 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 748 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: PQFN5X6-8L

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SSFT3904J7-HF Datasheet (PDF)

 ..1. Size:521K  silikron
ssft3904j7-hf.pdf

SSFT3904J7-HF
SSFT3904J7-HF

SSFT3904J7-HFMain Product Characteristics: VDSS 30V RDS(on) 3m (typ.) ID 120APQFN5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem

 6.1. Size:719K  silikron
ssft3904u.pdf

SSFT3904J7-HF
SSFT3904J7-HF

SSFT3904U Main Product Characteristics: VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw

 6.2. Size:759K  silikron
ssft3904.pdf

SSFT3904J7-HF
SSFT3904J7-HF

SSFT3904 Main Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.1. Size:454K  silikron
ssft3906.pdf

SSFT3904J7-HF
SSFT3904J7-HF

SSFT3906Main Product Characteristics: VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.)ID 90A TO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

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