SSPL5505 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL5505
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 160 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 101.6 nC
Tiempo de subida (tr): 88.2 nS
Conductancia de drenaje-sustrato (Cd): 837 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSPL5505
SSPL5505 Datasheet (PDF)
sspl5505.pdf
SSPL5505 Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl5508.pdf
SSPL5508 Main Product Characteristics VDSS 55V RDS(on) 7.2m(typ.) ID 110A Schematic Diagram TO-220 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
sspl50n30h.pdf
SSPL50N30H Main Product Characteristics: VDSS 300V RDS(on) 45m(typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
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